Methods for embedding controlled-cavity MEMS package in integration board

ABSTRACT

An embedded micro-electro-mechanical system (MEMS) ( 100 ) comprising a semiconductor chip ( 101 ) embedded in an insulating board ( 120 ), the chip having a cavity ( 102 ) including a radiation sensor MEMS ( 105 ), the opening ( 104 ) of the cavity at the chip surface covered by a plate ( 110 ) transmissive to the radiation ( 150 ) sensed by the MEMS. The plate surface remote from the cavity having a bare central area, to be exposed to the radiation sensed by the MEMS in the cavity, and a peripheral area covered by a metal film ( 111 ) touching the plate surface and a layer ( 112 ) of adhesive stacked on the metal film.

FIELD OF THE INVENTION

The present invention is related in general to the field ofsemiconductor devices and processes, and more specifically to thestructure and fabrication method of embedded micro-mechanical device(MEMS) packages with a nook for the sensor chip exposed to ambient.

DESCRIPTION OF RELATED ART

The wide variety of products collectively calledMicro-Electro-Mechanical devices (MEMS) are small, low weight devices onthe micrometer to millimeter scale, which may have mechanically movingparts and often movable electrical power supplies and controls, or theymay have parts sensitive to thermal, acoustic, or optical energy. MEMShave been developed to sense mechanical, thermal, chemical, radiant,magnetic, and biological quantities and inputs, and produce signals asoutputs. Because of the moving and sensitive parts, MEMS have a need forphysical and atmospheric protection. Consequently, MEMS are placed on asubstrate and have to be surrounded by a housing or package, which hasto shield the MEMS against ambient and electrical disturbances, andagainst stress.

A Micro-Electro-Mechanical System (MEMS) integrates mechanical elements,sensors, actuators, and electronics on a common substrate. Themanufacturing approach of a MEMS aims at using batch fabricationtechniques similar to those used for microelectronics devices. MEMS canthus benefit from mass production and minimized material consumption tolower the manufacturing cost, while trying to exploit thewell-controlled integrated circuit technology.

An example of MEMS includes mechanical sensors, both pressure sensorsincluding microphone membranes, and inertial sensors such asaccelerometers coupled with the integrated electronic circuit of thechip. The mechanically moving parts of a MEMS are fabricated togetherwith the sensors and actuators in the process flow of the electronicintegrated circuit (IC) on a semiconductor chip. The mechanically movingparts may be produced by an undercutting etch at some step during the ICfabrication; examples of specific bulk micromachining processes employedin MEMS sensor production to create the movable elements and thecavities for their movements are anisotropic wet etching and deepreactive ion etching.

Another example is an 8-pin digital infrared (IR) temperature sensormade in a silicon chip of about 2 by 2 mm side length, which includes athermopile (multiple thermo-elements) of bismuth/antimony orconstantan/copper pairs on a sensor membrane suspended in a cavitycreated by anisotropic silicon wet etching through a grid of holes (holediameter about 18 μm, hole pitch about 36 μm center-to-center) in themembrane. The cavity is closed by a laminate cover-plate (about 14 μmthick) overlaying the membrane to protect the sensors, and the IRradiation reaches the thermocouple tips through the rear silicon bulk ofthe cavity. The resulting hot spot on the thermocouple tips creates atemperature difference between the tips and the opposite thermocoupleends at ambient temperature, which in turn creates the voltagedifference to be monitored as a contactless temperature measurement. Forthe 8 pins, the chip may have 8 solder bumps surrounding the coverplate-protected cavity or 8 pressure contacts and is thus commonlyreferred to as a wafer-chip-scale package (WCSP); in the modificationwith pressure (or solderable) contacts, the package belongs to the QuadFlat No-Lead (QFN) family.

Following the technology trends of miniaturization, integration and costreduction, substrates and boards have recently been developed which canembed and interconnect chips and packages in order to reduce boardspace, thickness, and footprint while increasing power management,electrical performance, and fields of application. Examples includepenetration of integrated boards into the automotive market, wirelessproducts, and industrial applications.

As examples, integration boards have been successfully applied to embedwafer level packages, passives, power chips, stacked and bonded chips,wireless modules, power modules, generally active and passive devicesfor applications requiring miniaturized x/y areas and shrinkingthickness in z-dimension.

SUMMARY OF THE INVENTION

Applicants realized that a wide field of industrial, automotive andconsumer applications would open up if a MEMS device such as a sensorcould safely and cost-effectively be embedded in miniaturized boards aspart of a larger integrated system, which may include additional one ormore single or stacked chips. For a MEMS to operate in an immersedlocation in an integration board, the integration would need to allow anunobstructed access of the physical entity-to-be-monitored to the MEMS;the integration board has to leave a window for light, sound, gas,moisture, etc. to transmit through. In the example of a temperaturesensor, the IR radiation would need unobstructed access to the IR sensorlocated in a cavity; this means the cavity has must have a controlledopening to the ambient. A person skilled in the art realizes themultitude of wafer fabrication and chip assembly steps in a productionprocess flow to produce an embedded MEMS and thus the problem ofprotecting the sensor through the sequence of steps.

Applicants solved the problem of protecting the MEMS through thefabrication flow and opening the cavity for the access to the ambientonly at the conclusion of the multi-step flow, when they discovered thata stack of two layers, an adhesive layer on a patterned metal film onthe plate, placed across the MEMS cavity cover plate will do the job ofprotecting the MEMS in the cavity through all following laser and etchsteps of the process flow. The protective metal film is placed acrossthe cavity cover plate in the silicon wafer front-end process flow whilethe chip is not yet singulated from the wafer, and the adhesive layer isattached on the metal film in the initial step of immersing the chipinto the integration board.

An embodiment of the invention is a method for fabricating a MEMS byplacing a patterned metal film across the plate surface remote from thecavity in a chip, wherein the cavity includes a radiation sensor MEMSand the opening of the cavity at the chip surface is covered by a platetransmissive to the radiation sensed by the MEMS. Another embodiment ofthe invention is a method for fabricating an embedded MEMS by attachingthe metal film, which is on the plate surface remote from the cavity,and the chip surface onto a patterned conductive foil covered by a layerof adhesive; then embedding the non-attached chip body in an insulatingboard; and removing form the cover plate sequentially portions of theconductive foil, then of the adhesive layer, and then of the metal film,thereby exposing the plate to the radiation to be sensed by the MEMS inthe cavity.

Another embodiment of the invention is a MEMS with a semiconductor chipembedded in an insulating board. The chip has a cavity including aradiation sensor MEMS; the opening of the cavity at the chip surface iscovered by a plate transmissive to the radiation sensed by the MEMS. Theplate surface remote from the cavity has a bare central area, to beexposed to the radiation sensed by the MEMS in the cavity, and aperipheral area covered by a metal film touching the plate surface and alayer of adhesive stacked on the metal film. The radiation to be sensedby the MEMS may be an electro-magnetic radiation, such as visible orinfrared light, or it may by acoustic radiation, such as sound, orchemical radiation, such as gases.

Another embodiment of the invention includes a vertical stack of twosemiconductor chips embedded in an insulating board, wherein one of thechips is a radiation-sensing MEMS in a cavity with plate-coveredopening, and the other chips contains a microprocessor or a memory.

Yet another embodiment of the invention is a combination of two MEMS.One MEMS is a board-embedded chip with a plate-covered cavity includinga radiation sensor, the other MEMS includes an emitter of radiation,either embedded in or attached to the integration board, or anothersensor responding to a different element.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an exemplary radiation-sensing micro-electro-mechanicalsystem (MEMS) embedded in an insulating board according to theinvention.

FIGS. 2 to 8 illustrate certain steps of the fabrication method toprotect the MEMS through the manufacturing flow of creating the chipwith a cavity including the MEMS and embedding the chip in aninterconnection board.

FIG. 2 depicts a portion of a semiconductor wafer prepared with aplurality of cavities covered by a plate.

FIG. 3 shows the steps of placing a patterned metal film across theplate surface and singulating the chips.

FIG. 4 illustrates the step of inserting a chip into an adhesive layeron a conductive foil.

FIG. 5 depicts the step of forming an insulating embedding matrixsurrounding the chip and attached to the conductive foil.

FIG. 6 shows the step of using a laser to expose the chip terminals andto create a plurality of via-holes through the insulating embedment.

FIG. 7 illustrates the steps of plating metal in the via-holes andacross the insulating board; etching the plated metal to expose theadhesive layer over the central area of the cavity plate; and depositingsolder masks on both board sides.

FIG. 8 depicts the steps of removing the exposed adhesive layer (bylaser) and the metal film (by etch) in the central plate area, freeingthe cover plate to the radiation to be sensed by the MEMS in the cavity.

FIG. 9 shows another embodiment of the invention, a vertical stack oftwo semiconductor chips embedded in an insulating board, wherein one ofthe chips is a radiation-sensing MEMS in a cavity with plate-coveredopening, and the other chips contains a microprocessor or a memory.

FIG. 10 depicts another embodiment of the invention, a combination oftwo MEMS; one of the MEMS is a board-embedded chip with a plate-coveredcavity including a radiation sensor, the other MEMS may be an emitter ofradiation, either embedded in or attached to the integration board, ormay be another sensor responding to a different element.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

FIG. 1 illustrates an exemplary embodiment of the invention, a devicegenerally designated 100. The device includes a semiconductor chip 101with terminals 106; chip 101 is embedded in an insulating board 120.Chip 101 contains a cavity 102 with a micro-electro-mechanical system(MEMS) 105. An exemplary chip suitable as an infrared-sensing MEMS maybe square-shaped with a side length 103 of about 2 mm. Board 120 has aplurality of solder bumps 130 attached for interconnection of device 100to external parts. As an example, the height 140 of board 120 togetherwith solder bumps 130 may be approximately 1 mm.

Chip 101 has a cavity 102 with an opening 104 facing the surface of chip101 and the top side of device 100. In the exemplary embodiment of FIG.1, inside cavity 102 is MEMS 105 preferably a radiation sensor.Exemplary sensors may be selected from a group responsive toelectro-magnetic radiation, such as visible or infrared light, toacoustic radiation, such as sound, and to chemical radiation, such asgases. A preferred example as sensor in FIG. 1 is a digital infrared(IR) temperature sensor including a thermopile (multiplethermo-elements) of bismuth/antimony or constantan/copper pairs on asensor membrane 105. The membrane is suspended in cavity 102 created byanisotropic silicon wet etching through a grid of holes (hole diameterabout 18 μm, hole pitch about 36 μm center-to-center) in the membrane.

As FIG. 1 shows, the opening of cavity 102 is closed by a laminatecover-plate 110 (about 15 μm thick) overlaying the membrane to protectthe sensors; the plate is transmissive to the radiation sensed by theMEMS. In the example of FIG. 1, the center area of plate 110 is bare sothat the IR radiation 150 can reach the thermocouple tips through theplate. For this example, a preferred material of the plate is curedphotoresist. Since the opening 104 of cavity 102 and MEMS 105 face theincoming radiation 150, the sensitivity of MEMS 105 is considerablyenhanced compared to an arrangement where the radiation is received bythe MEMS through the bulk semiconductor as a filter—an importantadvantage for industrial applications of device 100. As a result of theincoming radiations, a hot spot on the thermocouple tips creates atemperature difference between the tips and the opposite thermocoupleends, which are at ambient temperature; the temperature difference inthe thermocouples creates the voltage difference to be monitored as acontactless temperature measurement.

In the embodiment of FIG. 1, the peripheral areas of the plate surfaceremote from cavity 102 are not bare as the center plate area, but have aplurality of material layers stacked on the surface. Touching thesurface of plate 110 is a metal film 111, which served as a protectivelayer in process steps using CO₂ lasers (see below). Metal film 111preferably includes a titanium-tungsten layer of about 0.15 μm thicknesson cover plate 110 and a copper layer of about 0.20 μm thickness on thetitanium-tungsten layer. Alternatively, film 111 may just be copper.

Stacked on metal film 111 is a layer 112 of cured (polymerized) adhesivematerial. It is preferably an epoxy-based insulating compound in thepreferred thickness range between 10 and 20 μm, but may be thinner orthicker. Layer 112 originates from the assembly process step (seebelow), when the face of chip 101 with its terminals and themetal-film-covered plate was immersed in an adhesive layer printed on asupporting conductive foil; at this stage, the adhesive compound of thelayer is not cured yet. Somewhat thicker regions 112 a of adhesive epoxyat the periphery of chip terminals are also remnants of the immersionassembly step.

Touching adhesive layer 112 is a region of conductive material generallydesignated 113. Preferably, the conductive material comprises copper.Integrated into the unified conductive region are material, such ascopper, deposited preferably by a plating technique, and material from aconductive foil, such as copper foil. The foil has been mentioned abovefor the process step of attaching chip 101 face-down by an adhesivelayer. Conductive material 113 also contacts the chip terminals 106.

The insulating compound of board 120 can be selected from a group ofcomposites, which are mechanically strong and insensitive to variationsof temperature and moisture. An example of board materials includespressed layers of glass-fiber enforced plastic. Integral to board 120are a plurality of conductive via-holes 121, which allow electricalconnection vertically through board 120.

As FIG. 1 shows, both sides of board 120 preferably have a protectivelayer 122; a preferred choice of material is a solder mask, which canserve as the basis for symbolization. Since the opening of protectivelayer 122 can be designed so that it approximately follows the perimeterof the cavity opening 104, but is not wider than opening 104, layer 122can act to limit the field of view. As a consequence, cavity 102 becomesa controlled cavity. This feature is an advantage for precisionmeasurements of incoming radiation 150. In FIG. 1, opening 123 ofprotective layer 122 is shown concentric with, but significantlynarrower than cavity opening 104. FIG. 1 indicates schematically thereflectivity of layer 122 by refracted rays 151.

Other embodiments of the invention are a method for fabricating amicro-electro-mechanical system (MEMS), illustrated in FIGS. 2 and 3,and a method for fabricating an embedded MEMS, illustrated in FIGS. 3 to8. FIG. 2 depicts a portion of a semiconductor wafer 201 prepared with aplurality of chips 101; each chip has terminals 106. Further, each chiphas a cavity 102 and inside the cavity a MEMS 105; an exemplary MEMS isa radiation sensor. The opening 104 of cavity 102 is covered by a plate110, which is transmissive to the radiation sensed by the MEMS. Forinfrared radiation sensing MEMS, a preferred material for plate 110 is alaminate cured photoresist, and a preferred thickness is between 10 and20 μm, more preferably about 15 μm.

FIG. 3 depicts the process step of depositing and patterning a metalfilm 111 across the plate surface remote from the cavity. A preferreddeposition method is sputtering, and a preferred metal includes atitanium-tungsten layer of about 0.15 μm thickness on cover plate 110and a copper layer of about 0.20 μm thickness on the titanium-tungstenlayer. Alternatively, film 111 may just be copper. Also shown in FIG. 3are the steps of backgrinding and singulating wafer 201; the step ofsingulation is preferably performed by sawing along lines 301. Theindividual chips 101 may be placed in tape and reel for transport toassembly and packaging process steps.

In the next process steps, illustrated in FIG. 4, a layer 112 a ofpolymeric adhesive is spread across a conductive foil 401. The polymericadhesive has not yet been subjected to the curing (polymerization) cycleand has thus low viscosity; layer 112 a preferably has a thicknessgreater than 25 μm. A preferred material for polymeric adhesive is aB-stage epoxy chip-attach compound, and a preferred material for theconductive foil is copper. A chip 101, with its terminals 106 and themetal film 111 on the cavity plate 110 facing the adhesive layer 112 a,is aligned with the layer 112 a of polymeric adhesive. Then, chip 101 islowered (arrow 410) to touch layer 112 a and slightly pressured toimmerse its terminals 106 and metal film 111 and plate 110 into adhesive112 a. As indicated in FIG. 5, by this assembly action the thickness oflayer 112 a is reduced from >25 μm to 10 to 20 μm, herein designated112; the polymeric adhesive may remain somewhat thicker at the chipterminals 106, since they may be thinner than plate 110. Afteradhesively attaching chip 101 to conductive foil 401, the polymericmaterial of layer 112 is polymerized (hardened).

In the process step displayed in FIG. 5, insulating compound is laidaround the five cuboid sides of chip 101, which are not attached toconductive foil 401 with the goal of embedding the non-attached chipbody in insulating board 120. Suitable insulating compound may beselected from a group of composites, which are mechanically strong andinsensitive to variations of temperature and moisture. An example of aninsulating compound includes pressed layers of glass-fiber enforcedplastic. It is preferred that another conductive foil 501 (for instancea copper foil) is placed on the board side opposite foil 401.

In the process steps shown in FIG. 6, etchants (alternatively lasers)are used to open windows into conductive foil 401 in places, where chipterminals 106 are located, and in other places, where via-holes are tobe opened through board 120 from the side with foil 401 to the side withfoil 501. Lasers are then used to remove the hardened polymeric adhesiveon terminals 106 and expose the metal of the terminals, and further todrill through the bulk of board 120 to create the via-holes 601 andexpose access to the conductive foils 501.

A number of process steps are summarized in FIG. 7. In a plating step,metal (preferably copper) is deposited on both sides of board 120. Asresults of this step, conductive layers 401 and 501 become thicker,electrical contacts are established between chip terminals 106 and foil401, and via-holes 601 become electrically conductive.

In the following etching step, the plated metals as well as theconductive foil are removed from the center area of plate 110. Thediameter of the opening is designated 123; in the example of FIG. 3,diameter 123 is shown significantly narrower than opening 104 of cavity102. It should be noted that this etch step leaves the adhesive layer112 on the metal film 111 over plate 110.

FIG. 7 also depicts the step of placing protective layers 122 on thesides of board 120. A preferred selection of material is a solder mask,since it can support device symbolization. The configuration of thesolder mask retains the opening 123 in the center of the cover plate 110over cavity 102.

FIG. 8 illustrates the result of the next process steps. A laser,preferably a CO₂ laser, is used to remove the polymerized adhesive layer112 exposed in opening 123 in the center of the cover plate 110. Theprogression of the laser is stopped by metal film 111. Next, a chemicaletching technique is used to remove the metal film 111 across the centerof cover plate 110. As mentioned, metal film 111 may be atitanium-tungsten layer of about 0.15 μm thickness on cover plate 110stacked with a copper layer of about 0.20 μm thickness on thetitanium-tungsten layer; alternatively, metal film 111 may just becopper. After the removal of metal film 111, the center area of plate110 is bare so that the incoming radiation can reach the MEMS sensorthrough the plate.

In the next process step, not shown in FIG. 8, solder bumps may beattached to the metal at the board surface opposite chip 101. The resultis indicated in FIG. 1. Alternatively, the connection to external partsmay be accomplished by pressure contacts. Finally, the embedded sensordevices are singulated in individual units 100. The step of singulationis preferably performed by sawing through the board along lines 801. Theindividual units 100 may be placed in tape and reel for shipping.

Another embodiment of the invention is illustrated in FIG. 9. Thedevice, generally designated 900, includes a vertical stack of twosemiconductor chips 901 and 960 embedded in an insulating board 920. Oneof the chips, designated 901, is a radiation-sensing MEMS 905 in acavity 902 with plate-covered opening, and the other chip, designated960, contains a microprocessor, a memory, or application-specificcircuitry. Chip 901 has a cavity 902 including a radiation sensor MEMS905; the opening 923 of the cavity at the chip surface is controlled bysolder mask 922 and covered by a plate 910 transmissive to the radiation950 sensed by the MEMS. The plate surface remote from the cavity has abare central area, to be exposed to the radiation sensed by the MEMS inthe cavity, and a peripheral area covered by a metal film 911 touchingthe plate surface and a layer 912 of adhesive stacked on the metal film.Chip 960 is attached to interconnecting metallization 962 by adhesivelayer 961, which may be an unfilled epoxy compound. The thickness 940 ofdevice 900, including solder bumps 930 for connection to external parts,is about 1 mm.

FIG. 10 depicts another embodiment of the invention, a combination oftwo MEMS. One of the MEMS, designated 1001, is a board-embedded chipwith a plate-covered cavity including a radiation sensor, as describedin FIG. 1. The thickness 1040 of MEMS 1001 may be about 1 mm. The otherMEMS, designated 1002 and preferably packaged in a chip-size package,may be an emitter of radiation 1011 suitable to sending out signals,either embedded in board 1020 (not shown in FIG. 10) or attached to theintegration board 1020 (depicted in FIG. 10). Or it may be anothersensor responding to a different element. This element may be adifferent kind of radiation 1012, or it may be related, for example, togravitation, to moisture, to magnetic fields, or to organic entities orspecific molecules. The thickness 1041 of MEMS 1002 may be 1 mm or less.The configuration of FIG. 10 allows sensing of different elementswithout the need of a barrier material; it facilitates proximity.

While this invention has been described in reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. Various modifications and combinations of theillustrative embodiments, as well as other embodiments of the invention,will be apparent to persons skilled in the art upon reference to thedescription. As an example, the invention applies to products using anytype of semiconductor chip, discrete or integrated circuit, and thematerial of the semiconductor chip may comprise silicon, silicongermanium, gallium arsenide, or any other semiconductor or compoundmaterial used in integrated circuit manufacturing.

As another example, the invention applies to MEMS having parts movingmechanically under the influence of an energy flow (acoustic, thermal,or optical), a temperature or voltage difference, or an external forceor torque. Certain MEMS with a membrane, plate or beam can be used as apressure sensor (for instance microphone and speaker), inertial sensor(for instance accelerometer), or capacitive sensor (for instance straingauge and RF switch); other MEMS operate as movement sensors fordisplacement or tilt; bimetal membranes work as temperature sensors.

It is therefore intended that the appended claims encompass any suchmodifications or embodiment.

We claim:
 1. An embedded micro-electro-mechanical system (MEMS)comprising: a semiconductor chip embedded in an insulating board, thechip having a cavity including a radiation sensor MEMS, the opening ofthe cavity at the chip surface covered by a plate transmissive to theradiation sensed by the MEMS; the plate surface remote from the cavityhaving a bare central area, to be exposed to the radiation sensed by theMEMS in the cavity, and a peripheral area covered by a metal filmtouching the plate surface and a layer of adhesive stacked on the metalfilm.
 2. The MEMS of claim 1 further including, on the peripheral platesurface, a conductive foil touching the adhesive layer on the metalfilm.
 3. The MEMS of claim 1 wherein the radiation to be sensed by theMEMS is selected from a group including electro-magnetic radiation, suchas visible or infrared light, acoustic radiation, such as sound, andchemical radiation, such as gases.
 4. The MEMS of claim 1 wherein thecover plate is made of a cured photoresist material having a thicknessof about 15 μm.
 5. The MEMS of claim 1 wherein the protective metal filmincludes a titanium-tungsten layer of about 0.15 μm thickness on thecover plate and a copper layer of about 0.20 μm thickness on thetitanium-tungsten layer.
 6. A method for fabricating amicro-electro-mechanical system (MEMS), comprising the steps of:providing a semiconductor chip having a cavity including a radiationsensor MEMS, the opening of the cavity at the chip surface covered by aplate transmissive to the radiation sensed by the MEMS; and placing apatterned metal film across the plate surface remote from the cavity. 7.The method of claim 6 wherein the cover plate is made of a curedphotoresist material having a thickness of about 15 μm.
 8. The method ofclaim 6 wherein the protective metal film includes a titanium-tungstenlayer of about 0.15 μm thickness on the cover plate and a copper layerof about 0.20 μm thickness on the titanium-tungsten layer.
 9. A methodfor fabricating an embedded micro-electro-mechanical system (MEMS),comprising the steps of: providing a chip having a radiation-sensingMEMS in a cavity covered by a plate having a patterned metal film on theplate surface remote from the cavity; attaching the chip surface withthe metal film onto a patterned conductive foil covered by a layer ofadhesive; embedding the non-attached chip body in an insulating board;and removing from the cover plate sequentially portions of theconductive foil, then of the adhesive layer, and then of the metal film,thereby exposing the plate to the radiation to be sensed by the MEMS inthe cavity.
 10. The method of claim 9 wherein the step of removingportions of the conductive foil includes a chemical etching technique.11. The method of claim 9 wherein the step of removing portions of theadhesive layer includes a laser technique.
 12. The method of claim 9wherein the step of removing portions of the metal film includes anotherchemical etching technique.
 13. The method of claim 9 wherein the chipsurface further includes chip terminals connected to the MEMS.
 14. Themethod of claim 9 further including the step of connecting the chipterminals to the patterned conductive foil.
 15. The method of claim 9wherein the cover plate is made of a cured photoresist material having athickness of about 15 μm.
 16. The method of claim 9 wherein theprotective metal film includes a titanium-tungsten layer of about 0.15μm thickness on the cover plate and a copper layer of about 0.20 μmthickness on the titanium-tungsten layer.